| PART |
Description |
Maker |
| HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| EM47CM1688SBA-125 EM47CM1688SBA-150 EM47CM1688SBB |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM47EM3288SBA EM47EM3288SBA-125 EM47EM3288SBA-150 |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM47FM0888MBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| 2SK3458 |
Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3322 |
Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A)
|
TY Semiconductor Co., Ltd
|
| MT49H16M18 MT49H32M9 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| 2SK3456 |
N-Channel MOSFET
Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 1050278001 SD-105027-801 |
1.10mm(.043"), 0.75mm(.030"), 0.70mm(.028") Pitch microSD Card Header with Detect Switch (VDD), Height 1.70mm
1.10mm(.043), 0.75mm(.030), 0.70mm(.028) Pitch microSD Card Header with Detect Switch (VDD), Height 1.70mm
|
Molex Electronics Ltd.
|
| VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
